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IXFH36N55Q2
Symbol
Test Conditions
Characteristic Values
TO-247 AD (IXFH) Outline
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
g fs
V DS = 10 V; I D = 0.5 ? I D25 , pulse test
15
26
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
4100
660
pF
pF
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
C rss
t d(on)
160
17
pF
ns
Tab - Drain
t r
t d(off)
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 ? (External),
13
42
ns
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
t f
Q g(on)
8
110
ns
nC
A
A 1
A 2
b
4.7
2.2
2.2
1.0
5.3
2.54
2.6
1.4
.185
.087
.059
.040
.209
.102
.098
.055
Q gs
Q gd
R thJC
V GS = 10 V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
23
52
0.22
nC
nC
K/W
b 1
b 2
C
D
E
e
1.65
2.87
.4
20.80
15.75
5.20
2.13
3.12
.8
21.46
16.26
5.72
.065
.113
.016
.819
.610
0.205
.084
.123
.031
.845
.640
0.225
L
19.81
20.32
.780
.800
R thCK
0.25
K/W
L1
? P
Q
3.55
5.89
4.50
3.65
6.40
.140
0.232
.177
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
I S
I SM
V SD
V GS = 0 V
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
36
144
1.5
A
A
V
t rr
Q RM
I RM
I F = 25A -di/dt = 100 A/ μ s, V R = 100 V
1
9
250
ns
μ C
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
6,404,065B1
6,162,665
6,534,343 6,583,505
of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
6,259,123B1 6,306,728B1 6,683,344
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